Etching of hard masks
US6926843B2 · kind B2 · utility
35Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2000 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Feb 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lines are fabricated by patterning a hard mask to provide a line segment, the line segment having a first dimension measured across the line segment; reacting a surface layer of the line segment to form a layer of a reaction product on a remaining portion of the line segment; and removing the reaction product without attacking the remaining portion of the line segment and without attacking the substrate to form the line segment with a dimension across the line segment that is smaller than the first dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.