Methods for providing improved layer adhesion in a semiconductor device
US6927159B2 · kind B2 · utility
4Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | May 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment of the invention, a method for providing improved layer adhesion in a semiconductor is provided. The method includes forming a dielectric layer. The method also includes forming a layer of metal in direct contact with the dielectric layer. The method also includes directly exposing the layer of metal, after forming the layer of metal, to plasma at a power level sufficient to penetrate through the layer of metal and reach the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.