Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
US6927166B2 · kind B2 · utility
1Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Jan 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the metal layer is changed into a mixed phase of metal and oxygen and becomes substantially resistant to further oxidation during a subsequent heating at a higher temperature in an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.