Magnetic memory device
US6927996B2 · kind B2 · utility
7Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Feb 17, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) includes an array of magnetic memory cells arranged on a cross-point grid. Spurious voltages that build up on the stray wiring capacitance of unselected bit and word select lines are limited and discharged by diodes. The control of such spurious voltages improves device operating margins and allows the construction of larger arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.