Patent · US Expired

Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane

US6928872B2 · kind B2 · utility

40Cited by
13References
27Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 21, 2003
Grant dateAug 16, 2005
Priority date
Expiry dateMay 21, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01C19/5719
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An integrated gyroscope, including an acceleration sensor formed by: a driving assembly; a sensitive mass extending in at least one first and second directions and being moved by the driving assembly in the first direction; and by a capacitive sensing electrode, facing the sensitive mass. The acceleration sensor has an rotation axis parallel to the second direction, and the sensitive mass is sensitive to forces acting in a third direction perpendicular to the other directions. The capacitive sensing electrode is formed by a conductive material region extending underneath the sensitive mass and spaced therefrom by an air gap.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.