Methods of forming nitride films
US6929831B2 · kind B2 · utility
6Cited by
22References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2002 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Sep 13, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride film on a surface adjacent the plasma region. The thus deposited film may then be subjected to an activation anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.