Patent · US Expired

Method of monitoring introduction on interfacial species

US6929964B2 · kind B2 · utility

0Cited by
8References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 17, 2003
Grant dateAug 16, 2005
Priority date
Expiry dateSep 17, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/28167
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.