Process for preparing nano-porous metal oxide semiconductor layers
US6929970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Sep 15, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/542
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for preparing a layer of a nano-porous metal oxide semiconductor comprising the steps of: (i) providing metal oxide semiconductor nano-particles prepared by a wet precipitation process, (ii) heating said nano-particles at a temperature in the range of 250 to 600° C., (iii) preparing a dispersion of said heat-treated nano-particles from step (ii), (iv) applying said dispersion prepared in step (iii) to a support to produce a coating; and (v) subjecting said coating to a pressure in the range of 100 to 1000 bar at a temperature below 250° C.; a layer of a nano-porous metal oxide semiconductor obtained by this process; and a photovoltaic device comprising a layer of a nano-porous metal oxide semiconductor obtained by this process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.