Method of forming a conductive structure in a semiconductor material
US6930010B1 · kind B1 · utility
1Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2004 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Sep 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming one or more trenches between the first and second regions, and implanting a dopant into the bottom surfaces of the trenches to form a continuous conductive path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.