Method for depositing a nanolaminate film by atomic layer deposition
US6930059B2 · kind B2 · utility
594Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Feb 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.