Ion implantation system and ion implantation method
US6930316B2 · kind B2 · utility
30Cited by
21References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2001 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Jan 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31711
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.