High frequency semiconductor device
US6930334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2002 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Dec 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground potential; and a back face wiring provided on a back face side of the high frequency semiconductor chip. The back face wiring forms a high frequency transmission line together with the covering electrode functioning as a high frequency ground plate. A front face wiring may be provided on the front face side of the high frequency semiconductor chip to form a high frequency transmission line together with the covering electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.