Semiconductor device and manufacturing method of the same
US6930360B2 · kind B2 · utility
130Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Jul 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer; and a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom; wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location and at least one of the first and second impurity atoms is electrically active.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.