Calcium doped polysilicon gate electrodes
US6930362B1 · kind B1 · utility
6Cited by
3References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Oct 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A calcium doped polysilicon gate electrodes for PMOS containing semiconductor devices. The calcium doped PMOS gate electrodes reduce migration of the boron dopant out of the gate electrode, through the gate dielectric and into the substrate thereby reducing the boron penetration problem increasingly encountered with smaller device size regimes and their thinner gate dielectrics. Calcium doping of the gate electrode may be achieved by a variety of techniques. It is further believed that the calcium doping may improve the boron dopant activation in the gate electrode, thereby further improving performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.