Magnetic random access memory cell device using magnetic tunnel junction
US6930910B2 · kind B2 · utility
27Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Sep 7, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a magnetic random access memory (MRAM) cell device with a magnetic tunnel junction capable of obtaining a sufficient sense margins. To achieve this effect, the present invention provides a magnetic random access memory (MRAM) cell device, including: a word line; a bit line; a switching unit connected to the word line and the bit line; a magnetic tunnel junction unit connected to the bit line and the switching unit in parallel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.