Two-step atomic layer deposition of copper layers
US6933011B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming copper films at low temperatures is provided. The method comprises two steps of forming a copper oxide layer from a non-fluorine containing copper precursor on a substrate and reducing the copper oxide layer to form a copper layer on the substrate. The formation of copper oxide is carried out by atomic layer deposition using a non-fluorine containing copper precursor and an oxygen containing gas at a low temperature. Copper alkoxides, copper β-diketonates and copper dialkylamides are preferred copper precursors. The reduction of copper oxide layer formed is carried out using a hydrogen containing gas at a low temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.