Methods for providing a sub .15 micron magnetic memory structure

US6933155B2 · kind B2 · utility

Assignee

• GRANDIS · US

Inventors

• Frank Albert · Redwood City, US
• Yiming Huai · Pleasanton, US
• Paul P. Nguyen · San Jose, US

Key dates

• Filing date: May 21, 2003
• Grant date: Aug 23, 2005
• Expiry date: Aug 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

A method for providing a magnetic element is disclosed. The method includes providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method also includes defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish, polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.