Fabrication method of a semiconductor laser device
US6933159B2 · kind B2 · utility
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2References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 28, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Jul 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for fabricating a semiconductor laser device, a plurality of grooves are formed in a surface of one conductive type of an InP layer. The InP layer is thermally treated in an atmosphere including at least a gas containing phosphorus and a gas containing arsenic in a mixed state, thereby forming a plurality of active regions made of InAsP in the plurality of grooves. An other conductive type of semiconductor layer is formed after the active regions are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.