Process for doping a semiconductor body

US6933215B2 · kind B2 · utility

Assignee

• ATMEL Germany GmbH · DE

Inventors

• Christoph Bromberger · Heilbronn, DE
• Franz Dietz · Heilbronn, DE
• Volker Dudek · Ditzingen, DE
• Michael Graf · Leutenbach, DE
• Joern Herrfurth · Heilbronn, DE
• Manfred Klaussner · Heilbronn, DE

Key dates

• Filing date: Jun 11, 2002
• Grant date: Aug 23, 2005
• Expiry date: Jun 11, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2652
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method of producing a doped semiconductor structure with a trench, it is possible to set the doping of the trench side walls independently from the doping of the trench bottom, and to set different doping concentrations of the individual trench side walls relative to each other. In the method, a mask layer with a window therein is provided on a surface of a semiconductor body, and then a first doping step, a trench etching step, and a second doping step are carried out successively through this window while this one mask layer remains in place on the surface of the semiconductor body. Further etching and doping steps can be carried out successively also through this window of the mask layer.