Franz Dietz
17Patents
5h-index
14Co-inventors
59Inventor score
Filing activity: Jun 11, 2002 → Jan 18, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7001804B2 | Method of producing active semiconductor layers of different thicknesses in an SOI wafer | Electricity | 74 | Expired |
| US6878603B2 | Process for manufacturing a DMOS transistor | Electricity | 13 | Expired |
| US6780713B2 | Process for manufacturing a DMOS transistor | Electricity | 9 | Expired |
| US6933215B2 | Process for doping a semiconductor body | Electricity | 9 | Expired |
| US6806131B2 | Process for manufacturing a DMOS transistor | Electricity | 8 | Expired |
| US7130175B2 | Monolithic integratable circuit arrangement for protection against a transient voltage | Electricity | 5 | Expired |
| US7973333B2 | Lateral DMOS transistor and method for the production thereof | Electricity | 2 | Active |
| US7851326B2 | Method for producing deep trench structures | Electricity | 1 | Active |
| US7521756B2 | DMOS transistor with optimized periphery structure | Electricity | 1 | Active |
| US7144796B2 | Method of fabricating semiconductor components through implantation and diffusion in a semiconductor substrate | Electricity | 1 | Expired |
| US10431507B2 | Contact-via chain as corrosion detector | Electricity | 0 | Active |
| US7923362B2 | Method for manufacturing a metal-semiconductor contact in semiconductor components | Electricity | 0 | Active |
| US11175331B2 | Aging detector for an electrical circuit component, method for monitoring an aging of a circuit component, component and control device | Electricity | 0 | Active |
| US7230342B2 | Registration mark within an overlap of dopant regions | Physics | 0 | Expired |
| US10684323B2 | Assembly of strip conductors, device, and method for determining errors in a semiconductor circuit | Physics | 0 | Active |
| US7189619B2 | Process for manufacturing vertically insulated structural components on SOI material of various thickness | Electricity | 0 | Expired |
| US7009256B2 | Semiconductor over-voltage protection structure for integrated circuit and for diode | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.