Method for transistor gate dielectric layer with uniform nitrogen concentration
US6933248B2 · kind B2 · utility
7Cited by
6References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2001 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Sep 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The instant invention describes a method for forming a dielectric film with a uniform concentration of nitrogen. The films are formed by first incorporating nitrogen into a dielectric film using RPNO. The films are then annealed in N2O which redistributes the incorporated species to produce a uniform nitrogen concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.