3-grid neutral beam source used for etching semiconductor device
US6933495B1 · kind B1 · utility
9Cited by
1References
8Claims
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Assignee
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Key dates
| Filing date | Apr 1, 2004 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Apr 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H3/02
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Disclosed is a 3-grid neutral beam source used for etching a semiconductor device. The 3-grid neutral beam source includes a plasma generating chamber, a grid assembly including first to third grids, which are sequentially overlapped with each other by interposing an insulation material therebetween for obtaining a great amount of ion flux at a low ion energy, and a reflective member for converting an ion beam into a neutral beam by reflecting the ion beam. The semiconductor device is prevented from being damaged due to reduced kinetic energy of ions, and an etch rate of the semiconductor device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.