Light emitting devices with enhanced luminous efficiency
US6933535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Dec 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16
Abstract
A structure includes semiconductor light emitting device and a wavelength converting layer. The wavelength converting layer converts a portion of the light emitted from the semiconductor light emitting device. The dominant wavelength of the combined light from the semiconductor light emitting device and the wavelength converting layer is essentially the same as the wavelength of light emitted from the device. The wavelength converting layer may emit light having a spectral luminous efficacy greater than the spectral luminous efficacy of the light emitted from the device. Thus, the structure has a higher luminous efficiency than a device without a wavelength converting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.