Semiconductor sensor having a diffused resistor
US6933582B2 · kind B2 · utility
6Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Jun 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/43
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor sensor includes a P-type semiconductor substrate having a N-type semiconductor layer disposed on one surface of the substrate and a P-type diffused resistor disposed in the N-type semiconductor layer. A first electric voltage is applied to the N-type semiconductor layer, a second electric voltage is applied to the substrate, a third electric voltage is applied to the P-type diffused resistor. The first electric voltage is higher than the second and third electric voltages. The sensor ensures stable operation against electric leakage and high noise protection because two depletion layers are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.