Test structure for detecting bridging of DRAM capacitors
US6934206B2 · kind B2 · utility
1Cited by
5References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 24, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Dec 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/48
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method is provided for the interconnection of bit lines in the test structure. The invention provides for the creation of a cross comb bit line design in the test structure which allows for the detection and identification of diagonal or horizontal bridging between two identifiable capacitors of DRAM structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.