Method for improving OPC modeling
US6934929B2 · kind B2 · utility
10Cited by
26References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Aug 7, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a method for OPC modeling. The procedure for tuning a model involves collecting cross-section images and critical dimension measurements through a matrix of focus and exposure settings. These images would then run through a pattern recognition system to capture top critical dimensions, bottom critical dimensions, resist loss, profile and the diffusion effects through focus and exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.