SiC material, semiconductor processing equipment and method of preparing SiC material therefor
US6936102B1 · kind B1 · utility
12Cited by
8References
22Claims
0Family size
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Inventors
Key dates
| Filing date | Aug 2, 2000 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jan 25, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the β-SiC csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the β-Sic crystals is 0.15 or above. The SiC material may contain both β-SiC crystals and α-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.