Etch process for etching microstructures
US6936183B2 · kind B2 · utility
8Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Nov 30, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.