Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
US6936528B2 · kind B2 · utility
21Cited by
8References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Oct 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A cobalt-containing film on a silicon-containing conductive region, and a titanium-rich capping layer is formed on cobalt-containing film. The atomic % ratio of titanium to other elements (if any) in the titanium-rich capping layer is more than one (1). The resultant structure is annealed so that cobalt of the cobalt-containing film and silicon of the silicon-containing conductive region react with each other to form a cobalt silicide film. When the formation of the cobalt-containing film is carried out at a high temperature, a diffusion restraint interface film is also formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.