Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition
US6936548B2 · kind B2 · utility
30Cited by
2References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/345
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing silicon nitride and silicon oxynitride films by CVD technology, where even at lower temperatures, acceptable film-deposition rates are achieved, without the by-product production of large amounts of ammonium chloride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.