Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
US6936839B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 12, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Feb 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A family of optical waveguide structures and high speed optoelectronic/transistor devices are obtained from a multilayer structure that includes a modulation doped quantum well structure formed over a DBR mirror. The optical waveguide structure is realized by implanting n-type ions to form a pair of n-type implant regions that define a waveguide region therebetween. An oxide layer (e.g., SiO2) is deposited over the waveguide region. A thermal annealing operation causes the oxide layer to introduce impurity free vacancy disordering that substantially eliminates absorption in the waveguide region. The waveguide region contributes to lateral confinement of light therein. An etching operation etches through the n-type implant regions to define sidewalls, which are subject to an oxidation operation that produces oxidized sections along the sidewalls. The oxide layer is removed, and a top distributed bragg reflector mirror is formed over the waveguide region. The resulting structure realizes an optical waveguide. Optoelectronic devices (including lasers, detectors, modulators, amplifiers) and transistor devices (including enhancement-mode and depletion mode JFET devices and bipolar-type …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.