Phase-change memory cell and method of fabricating the phase-change memory cell
US6936840B2 · kind B2 · utility
214Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2004 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jan 30, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.