Simone Raoux
26Patents
11h-index
36Co-inventors
71Inventor score
Filing activity: Jan 30, 2004 → Dec 30, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6936840B2 | Phase-change memory cell and method of fabricating the phase-change memory cell | Physics | 214 | Expired |
| US7494841B2 | Solution-based deposition process for metal chalcogenides | Emerging Cross-Sectional Technologies | 45 | Active |
| US7221579B2 | Method and structure for high performance phase change memory | Physics | 37 | Expired |
| US7488967B2 | Structure for confining the switching current in phase memory (PCM) cells | Electricity | 30 | Expired |
| US7009694B2 | Indirect switching and sensing of phase change memory cells | Physics | 26 | Expired |
| US7501648B2 | Phase change materials and associated memory devices | Electricity | 20 | Active |
| US8178387B2 | Methods for reducing recrystallization time for a phase change material | Electricity | 17 | Active |
| US8324605B2 | Dielectric mesh isolated phase change structure for phase change memory | Electricity | 14 | Active |
| US8946666B2 | Ge-Rich GST-212 phase change memory materials | Electricity | 13 | Active |
| US8363463B2 | Phase change memory having one or more non-constant doping profiles | Physics | 13 | Active |
| US8426242B2 | Composite target sputtering for forming doped phase change materials | Electricity | 11 | Active |
| US7932507B2 | Current constricting phase change memory element structure | Electricity | 10 | Active |
| US7745807B2 | Current constricting phase change memory element structure | Electricity | 8 | Active |
| US8772747B2 | Composite target sputtering for forming doped phase change materials | Electricity | 8 | Active |
| US8233317B2 | Phase change memory device suitable for high temperature operation | Physics | 7 | Active |
| US8029716B2 | Amorphous nitride release layers for imprint lithography, and method of use | Emerging Cross-Sectional Technologies | 5 | Active |
| US8114331B2 | Amorphous oxide release layers for imprint lithography, and method of use | Emerging Cross-Sectional Technologies | 5 | Active |
| US7875873B2 | Phase change materials and associated memory devices | Electricity | 4 | Active |
| US7491573B1 | Phase change materials for applications that require fast switching and high endurance | Electricity | 4 | Active |
| US8378328B2 | Phase change memory random access device using single-element phase change material | Physics | 4 | Active |
| US7459266B2 | Phase-change memory cell and method of fabricating the phase-change memory cell | Physics | 3 | Active |
| US9257643B2 | Phase change memory cell with improved phase change material | Electricity | 3 | Active |
| US8828785B2 | Single-crystal phase change material on insulator for reduced cell variability | Electricity | 2 | Active |
| US7910910B2 | Phase-change memory cell and method of fabricating the phase-change memory cell | Physics | 2 | Active |
| US7833825B2 | Solution-based deposition process for metal chalcogenides | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.