Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material

US6936850B2 · kind B2 · utility

Assignee

• Siced Electronics Development GmbH & Co. KG · DE

Inventors

• Peter Friedrichs · Koblenzer Straße, DE
• Dethard Peters · Edenkoben, DE
• Reinhold Schoerner · Großenseebach, DE

Key dates

• Filing date: Mar 22, 2002
• Grant date: Aug 30, 2005
• Expiry date: Jul 19, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.