Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys

US6936869B2 · kind B2 · utility

Assignee

• International Rectifier Corporation · US

Inventors

• Douglas A. Webb · Phoenix, US
• Michael G. Ward · Wells, US

Key dates

• Filing date: Jul 9, 2002
• Grant date: Aug 30, 2005
• Expiry date: Jul 9, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

Semiconductor devices, e.g., heterojunction field effect transistors, fabricated with silicon-germnanium buffer layer and silicon-carbon channel layer structures. The invention provides a method of reducing threading defect density via reducing germanium content in a SiGe relaxed buffer layer on which a strained silicon channel layer is formed, by forming the strained silicon channel layer of a silicon-carbon alloy, e.g., containing less than about 1.5 atomic % C substitutionally incorporated in the Si lattice of the alloy.