Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US6936898B2 · kind B2 · utility
44Cited by
9References
39Claims
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Key dates
| Filing date | Dec 31, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Mar 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Diagonal deep well region for routing the body-bias voltage for MOSFETS in surface well regions is provided and described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.