Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
US6937447B2 · kind B2 · utility
44Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jan 31, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/325
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.