Shigeru Haneda
32Patents
11h-index
26Co-inventors
71Inventor score
Filing activity: Sep 17, 2002 → May 27, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6937447B2 | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory | Emerging Cross-Sectional Technologies | 44 | Expired |
| US6914807B2 | Magnetic logic element and magnetic logic element array | Electricity | 39 | Expired |
| US7532503B2 | Magnetic recording element, magnetic recording apparatus and recording method of information | Physics | 39 | Active |
| US6956766B2 | Magnetic cell and magnetic memory | Electricity | 26 | Expired |
| US7381480B2 | Magnetic recording element and magnetic recording device using the same | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7042762B2 | Magnetic element and magnetic element array | Electricity | 23 | Expired |
| US7120049B2 | Magnetic cell and magnetic memory | Electricity | 16 | Expired |
| US7598578B2 | Magnetic element and signal processing device | Emerging Cross-Sectional Technologies | 15 | Active |
| US7558103B2 | Magnetic switching element and signal processing device using the same | Emerging Cross-Sectional Technologies | 15 | Active |
| US6906949B1 | Magnetic element and magnetic element array | Electricity | 11 | Expired |
| US7240419B2 | Method of manufacturing a magnetoresistance effect element | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7486486B2 | Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same | Physics | 10 | Active |
| US7126848B2 | Magnetic cell and magnetic memory | Electricity | 10 | Expired |
| US7269059B2 | Magnetic recording element and device | Electricity | 6 | Expired |
| US7265950B2 | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7372727B2 | Magnetic cell and magnetic memory | Electricity | 6 | Expired |
| US7042758B2 | Magnetic cell and magnetic memory | Physics | 5 | Expired |
| US7355883B2 | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7446348B2 | Light emitting device with filled tetrahedral (FT) semiconductor in the active layer | Electricity | 4 | Active |
| US7710690B2 | Magneto-resistance effect element capable of obtaining a reproducing signal with a high quality | Physics | 3 | Active |
| US7561385B2 | Magneto-resistive element in which a free layer includes ferromagnetic layers and a non-magnetic layer interposed therebetween | Physics | 3 | Expired |
| US7126849B2 | Magnetic cell and magnetic memory | Electricity | 3 | Expired |
| US7550779B2 | Light emitting device with filled tetrahedral (FT) semiconductor in the active layer | Electricity | 2 | Active |
| US8907303B2 | Stage device and control method for stage device | Electricity | 2 | Active |
| US7494724B2 | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory | Emerging Cross-Sectional Technologies | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.