Variable resistance memory and method for sensing same
US6937528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Sep 25, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/74
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense circuit and method for reading a resistance level of a programmable conductor memory element are provided. All rows and columns in a given memory array are initially held to the same potential. A desired row line is enabled by bringing it to approximately ground. The difference in voltage potential across a diode circuit of a selected cell activates the diodes and initiates current flow through the desired memory element of the desired cell. A column line associated with the cell is discharged from a precharge value through the diode circuit and memory element. The discharging voltage at the column line is compared with a reference voltage. If the voltage at the column line is greater than the reference voltage, then a high resistance level is detected, and, if the column line voltage is less than the reference voltage, a low resistance level is detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.