Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film
US6939760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jul 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for manufacturing a semiconductor device including a capacitor having a lower electrode, an upper electrode and a capacitive insulating film between the lower electrode and the upper electrode on a semiconductor substrate, wherein the capacitive insulating film is formed on the lower electrode over the semiconductor substrate using a chemical vapor deposition method, the method including: a lower electrode forming step of forming the lower electrode on the semiconductor, a dual-stage deposition step including a first stage for introducing a material gas containing a specified metal into a reactor in which the semiconductor substrate is placed and a second stage for subsequently introducing an oxidizing gas into the reactor, and wherein a metal oxide film as an oxide of the specified metal is formed on the lower electrode over the semiconductor substrate, by repeating the dual-stage deposition step two or more times, thereby forming the capacitive insulating film; and an upper electrode forming step of forming the upper electrode on the capacitive insulating film. Thus, it is possible to obtain the capacitive insulating film having good step coverage and a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.