Selective dry etching of tantalum and tantalum nitride
US6939795B2 · kind B2 · utility
15Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2002 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Sep 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76865
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers (30) are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper (40). The tantalum nitride films are selectively removed using an oxidizing plasma chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.