Etching memory
US6939806B2 · kind B2 · utility
2Cited by
6References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 23, 2002 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | May 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The etching method of the present invention for forming a hole having a high aspect ratio in a silicon oxide film formed on a substrate via a silicon nitride film includes the step of performing etching using an etching gas composed of a mixture of Ar gas, O2 gas, C5F8 gas and CH2F2 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.