Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer
US6940100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jan 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34346
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.