Patent · US Expired

Radiation protection in integrated circuits

US6940111B2 · kind B2 · utility

2Cited by

15References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Rainer Bruchhaus · Yokohama, JP
Uwe Wellhausen · Dresden, DE
Nicolas Nagel · Yokohama, JP
Stefan Gernhardt · Yokohama, JP

Key dates

Filing date	Nov 29, 2002
Grant date	Sep 6, 2005
Priority date	—
Expiry date	Nov 29, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer protects the feature from being damaged to radiation during, for example, processing of the IC. In one embodiment, the radiation protection layer comprises a noble metal, oxides, alloys, or compounds thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.