Integrated trim structure utilizing dynamic doping
US6940133B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2004 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Apr 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/43
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit trim structure includes a dopant source, a target trim element formed in proximity to the dopant source, and a conductive heating element. The heater element is formed in proximity to the dopant source and includes first and second terminals and a trapezoid shaped region formed between the first and second terminals. As predefined current pulse is applied to the first terminal to promote current flow between the first and second terminals, a local heat source is created at a predefined location within the trapezoid shaped region and in proximity to the dopant source such that dopant flows from the dopant source into the target trim element to change the conductive characteristics of the target trim element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.