Low data line capacitance image sensor array using air-gap metal crossover
US6940142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2001 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Mar 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The signal-to-noise ratio of amorphous silicon (a-Si:H) image sensor arrays is limited by electronic noise, which is largely due to data line capacitance. To reduce data line capacitance, an air-gap (i.e., vacuum or gas-filled space) is produced at crossover points separating the data lines and gate lines. This air-gap crossover structure is formed by depositing a release material on the gate lines, forming the data lines on the release material, and then removing (etching) the release material such that the data lines form an arch extending over the gate lines. A dielectric material is then applied to strengthen the data line, and the sensor pixels are then formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.