Modifying circuitry features in radiation sensitive layers with active secondary exposure masks
US6942958B2 · kind B2 · utility
6Cited by
16References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Jan 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.