Sequential deposition process for gap filling
US6943091B2 · kind B2 · utility
8Cited by
21References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2001 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Mar 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A deposition method for filling recesses in a substrate is described. In the method, the substrate is exposed to an energized deposition gas comprising first and second components, to deposit a first layer of a material in the recess, and thereafter, the ratio of the first component to the second component is reduced, to deposit a second layer of the material over the first layer in the recess. The deposition method may be used to fill recesses in a substrate and smoothen out reentrant cavities in a silicon nitride liner, in the fabrication of polysilicon gates in a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.