Deuterium incorporated nitride
US6943126B1 · kind B1 · utility
17Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Mar 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer. The forming is by CVD with a gas comprising a first compound which is SixL2x, and a second compound comprising nitrogen and deuterium, L is an amino group, and X is 1 or 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.