III-nitride light-emitting devices with improved high-current efficiency
US6943381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2004 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Jan 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.